4GB DDR3 1333 KINGSTON BULK

CL(IDD) 9 cycles

 

Row Cycle Time (tRCmin) 49.5ns (min.)

 

Refresh to Active/Refresh 160ns (min.)

 

Command Time (tRFCmin)

 

Row Active Time (tRASmin) 36ns (min.)

 

Power (Operating) 1.410 W

 

UL Rating 94 V - 0

 

Operating Temperature 0 to 85 C

 

Storage Temperature -55 to +100 C

 

JEDEC standard 1.5V (1.425V ~1.575V) Power Supply

 

VDDQ = 1.5V (1.425V ~ 1.575V)

 

667MHz fCK for 1333Mb/sec/pin

 

8 independent internal bank

 

Programmable CAS Latency

9, 8, 7, 6

Programmable Additive Latency

0, CL - 2, or CL - 1 clock

Programmable CAS Write Latency(CWL) = 7 (DDR3-1333)

 

8-bit pre-fetch

 

Burst Length

8 (Interleave without any limit, sequential with

starting address “000” only), 4 with tCCD = 4 which does not

 

allow seamless read or write [either on the fly using A12 or

 

MRS]

 

Bi-directional Differential Data Strobe

 

Internal(self) calibration

Internal self calibration through ZQ

pin (RZQ

240 ohm ± 1%)

On Die Termination using ODT pin

 

Average Refresh Period 7.8us at lower than TCASE 85°C,

 

3.9us at 85°C < TCASE < 95°C

 

Asynchronous Reset

 

PCB

Height 0.740” (18.75mm), double sided componen

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