към страницата на 4GB DDR3 1333 KINGSTON BULK
Описание на 4GB DDR3 1333 KINGSTON BULK:CL(IDD) 9 cycles
Row Cycle Time (tRCmin) 49.5ns (min.) Refresh to Active/Refresh 160ns (min.) Command Time (tRFCmin) Row Active Time (tRASmin) 36ns (min.) Power (Operating) 1.410 W* UL Rating 94 V - 0 Operating Temperature 0 to 85 C Storage Temperature -55 to +100 C • JEDEC standard 1.5V (1.425V ~1.575V) Power Supply • VDDQ = 1.5V (1.425V ~ 1.575V) • 667MHz fCK for 1333Mb/sec/pin • 8 independent internal bank • Programmable CAS Latency: 9, 8, 7, 6 • Programmable Additive Latency: 0, CL - 2, or CL - 1 clock • Programmable CAS Write Latency(CWL) = 7 (DDR3-1333) • 8-bit pre-fetch • Burst Length: 8 (Interleave without any limit, sequential with starting address “000” only), 4 with tCCD = 4 which does not allow seamless read or write [either on the fly using A12 or MRS] • Bi-directional Differential Data Strobe • Internal(self) calibration: Internal self calibration through ZQ pin (RZQ : 240 ohm ± 1%) • On Die Termination using ODT pin • Average Refresh Period 7.8us at lower than TCASE 85°C, 3.9us at 85°C < TCASE < 95°C • Asynchronous Reset • PCB: Height 0.740” (18.75mm), double sided componen Последно добавени продукти в категорията: | |||||||
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