4GB DDR3 1333 KINGSTON HYPERX CL7

Kingston s 512M x 64 - bit ( 4GB )

 

DDR3 - 1333 CL 7 SDRAM (Synchronous DRAM) , 2Rx 8 memory

 

JEDEC standard 1.5V (1.425V ~ 1.575V) Power Supply

 

VDDQ = 1.5V (1.425V ~ 1.575V)

 

667MHz fCK for 1333Mb/sec/pin

 

8 independent internal bank

 

Programmable CAS Latency

9, 8, 7, 6

Programmable Additive Latency

0, CL - 2, or CL - 1 clock

Programmable CAS Write Latency(CWL) = 7 (DDR3-1333)

 

8-bit pre-fetch

 

Burst Length

8 (Interleave without any limit, sequential with

starting address “000” only), 4 with tCCD = 4 which does not

 

allow seamless read or write [either on the fly using A12 or

 

MRS]

 

Bi-directional Differential Data Strobe

 

Internal(self) calibration

Internal self calibration through ZQ

pin (RZQ

240 ohm ± 1%)

On Die Termination using ODT pin

 

Average Refresh Period 7.8us at lower than TCASE 85°C,

 

3.9us at 85°C < TCASE < 95°C

 

Asynchronous Reset

 

PCB

Height 1.180” (30.00mm), double sided component

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