Super Talent 1GB DDR400
CL3
(D32PB1GJ)
- 1GB (128 Meg x 64)
- 184-pin, dual in-line memory module (DIMM)
- Fast data transfer rates: PC3200
- CAS Latency 3
- Utilizes 400 MT/s DDR SDRAM components
- VDD = VDDQ = +2.6V
- VDDSPD = +2.3V to +3.6V
- 2.6V I/O (SSTL_2 compatible)
- Commands entered on each positive CK edge
- DQS edge-aligned with data for READs;
centeraligned with data for WRITEs
- Internal, pipelined double data rate (DDR)
architecture; two data accesses per clock cycle
- Bidirectional data strobe (DQS) transmitted/
received with data—i.e., source-synchronous data
capture
- Differential clock inputs CK and CK#
- Four internal device banks for concurrent operation
- Programmable burst lengths: 2, 4, or 8
- Auto precharge option
- Auto Refresh and Self Refresh Modes
- 7.8125μs (512MB and 1GB)
maximum average periodic refresh interval
- Serial Presence Detect (SPD) with EEPROM
- Programmable READ CAS latency
- Gold edge contacts