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1GB DDR400 SUPER T
1GB DDR400 SUPER T(голяма снимка)
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към страницата на 1GB DDR400 SUPER T
Описание на 1GB DDR400 SUPER T:- Super Talent 1GB DDR400
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- CL3
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- (D32PB1GJ)
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- - 1GB (128 Meg x 64)
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- - 184-pin, dual in-line memory module (DIMM)
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- - Fast data transfer rates
- PC3200
- - CAS Latency 3
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- - Utilizes 400 MT/s DDR SDRAM components
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- - VDD = VDDQ = +2.6V
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- - VDDSPD = +2.3V to +3.6V
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- - 2.6V I/O (SSTL_2 compatible)
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- - Commands entered on each positive CK edge
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- - DQS edge-aligned with data for READs;
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- centeraligned with data for WRITEs
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- - Internal, pipelined double data rate (DDR)
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- architecture; two data accesses per clock cycle
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- - Bidirectional data strobe (DQS) transmitted/
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- received with data—i.e., source-synchronous data
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- capture
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- - Differential clock inputs CK and CK#
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- - Four internal device banks for concurrent operation
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- - Programmable burst lengths
- 2, 4, or 8
- - Auto precharge option
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- - Auto Refresh and Self Refresh Modes
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- - 7.8125μs (512MB and 1GB)
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- maximum average periodic refresh interval
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- - Serial Presence Detect (SPD) with EEPROM
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- - Programmable READ CAS latency
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- - Gold edge contacts
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